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preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 1 general description the ap2115 is cmos process low dropout linear regulator with enable function, the regulator delivers a guaranteed 1a (min.) co ntinuous load current. the ap2115 features low power consumption. the ap2115 is available in 1.2v, 1.8v, 2.5v and 3.3v regulator output, and available in excellent output accuracy 1.5%, it is also available in an excellent load regulation and line regulation performance. the ap2115 is available in standard packages of soic-8 and sot-89-5. features ? output voltage accuracy: 1.5% ? output current: 1a (min.) ? fold-back short current protection: 50ma ? low dropout voltage (3.3v): 450mv (typ.) @ i out =1a ? stable with 4.7 f flexible cap: ceramic, tantalum and aluminum electrolytic ? excellent line regulation: 0.02%/v (typ.), 0.1%/v (max.) @ i out =30ma ? excellent load regulation: 0.2%/a @ i out =1ma to 1a ? low quiescent current: 60 a (1.2v/1.8v/ 2.5v) ? low output noise: 30 v rms ? psrr: 68db @ freq=1khz (1.2v/1.8v) ? otsd protection ? operation temperature range: -40 c to 85 c ? esd: mm 400v, hbm 4000v applications ? lcd monitor ? lcd tv ? stb figure 1. package types of ap2115 soic-8 sot-89-5
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 2 pin configuration r5 package sot-89-5 r5 r5a 123 4 5 vout vin nc gnd en m package soic-8 figure 2. pin configuration of ap2115 (top view) pin descriptions pin no. sot-89-5 soic-8 name function 1 2, 3, 4 nc/en no connection/chip enable 2 6, 7 gnd gnd 3 5 en/nc chip enable, h ? normal work , l ? shutdown output/ no connection 4 8 vin input voltage 5 1 vout output voltage
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 3 functional block diagram figure 3. functional block diagram of ap2115
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 4 ordering information ap2115 - g1: green circuit type tr: tape & reel blank: tube package temperature range condition part number marking id packing type ap2115m-1.2g1 2115m-1.2g1 tube 1.2v ap2115m-1.2trg1 2115m-1.2g1 tape & reel ap2115m-1.8g1 2115m-1.8g1 tube 1.8v ap2115m-1.8trg1 2115m-1.8g1 tape & reel ap2115m-2.5g1 2115m-2.5g1 tube 2.5v ap2115m-2.5trg1 2115m-2.5g1 tape & reel ap2115m-3.3g1 2115m-3.3g1 tube soic-8 -40 to 85 c 3.3v ap2115m-3.3trg1 2115m-3.3g1 tape & reel 1.2v (r5) ap2115r5-1.2trg1 g22g tape & reel 1.8v (r5) ap2115r5-1.8trg1 g22h tape & reel 2.5v (r5) ap2115r5-2.5trg1 g37h tape & reel sot-89-5 -40 to 85 c 3.3v (r5) ap2115r5-3.3trg1 g41h tape & reel 1.2v (r5a) ap2115r5a-1.2trg1 g27d tape & reel 1.8v (r5a) ap2115r5a-1.8trg1 g27g tape & reel 2.5v (r5a) ap2115r5a-2.5trg1 g41f tape & reel sot-89-5 -40 to 85 c 3.3v (r5a) ap2115r5a-3.3trg1 g41g tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. 1.2v: fixed output 1.2v 1.8v: fixed output 1.8v 2.5v: fixed output 2.5v 3.3v: fixed out p ut 3.3v package m: soic-8 r5: sot-89-5
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v cc 6.5 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering,10 seconds) t lead 260 oc esd (machine model) 400 v esd (human body model) 4000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v in 2.5 6.0 v ambient operation temperature range t a -40 85 c
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 6 electrical characteristics ap2115-1.2 electrical charact eristics (note 2) v in =2.5v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a =25c, bold typeface applies over -40c t j 85c ranges, unless otherwise specified (note 3). parameter symbol test conditions min typ max unit output voltage v out v in =2.5v, 1ma i out 30ma v out 98.5% 1.2 v out 101.5% v input voltage v in 6 v maximum output current i out(max) v in =2.5v, v out =1.182v to 1.218v 1 a load regulation v out /v out i out v in =2.5v, 1ma i out 1a 0.2 1 %/a line regulation v out /v out v in 2.5v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =1.0a 1200 1300 mv quiescent current i q v in =2.5v, i out =0ma 60 75 a f=100hz 68 power supply rejectio n ratio psrr ripple 1vp-p v in =2.5v, i out =100ma f=1khz 68 db output voltage temperature coefficient v out /v out t i out =30ma, t a =-40c to 85c 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v en low voltage v il enable logic low, regulator off 0.4 v standby current i std v in =3.5v, v en in off mode 0.01 1.0 a start-up time t s n o load 20 s en pull down resistor r pd 3.0 m ? v out discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 25 c soic-8 74.6 thermal resistance jc sot-89-5 47 c/w note 2: to prevent the short circuit current protectio n feature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25c. over temperature specificatio ns guaranteed by design only.
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 7 electrical characteristics (continued) ap2115-1.8 electrical ch aracteristics (note 2) v in =2.8v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a =25c, bold typeface applies over -40c t j 85c ranges, unless otherwise specified (note 3). parameter symbol test conditions min typ max unit output voltage v out v in =2.8v, 1ma i out 30ma 98.5% v out 1.8 101.5% v out v maximum output current i out(max) v in =2.8v, v out =1.773v to 1.827v 1 a load regulation v out /v out i out v in =2.8v, 1ma i out 1a 0.2 1 %/a line regulation v out /v out v in 2.8v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =1.0a 500 750 mv quiescent current i q v in =2.8v, i out =0ma 60 75 a f=100hz 68 power supply rejectio n ratio psrr ripple 1vp-p v in =2.8v, i out =100ma f=1khz 68 db output voltage temperature coefficient v out /v out t i out =30ma, t a =-40c to 85c 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v en low voltage v il enable logic low, regulator off 0.4 v standby current i std v in =3.5v, v en in off mode 0.01 1.0 a start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m ? v out discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 25 c soic-8 74.6 thermal resistance jc sot-89-5 47 c/w note 2: to prevent the short circuit current protectio n feature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only.
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 8 electrical characteristics (continued) ap2115-2.5 electrical ch aracteristics (note 2) v in =3.5v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a =25c, bold typeface applies over -40 o c t j 85 o c ranges, unless otherwise specified (note 3). parameter symbol test co nditions min typ max unit output voltage v out v in =3.5v, 1ma i out 30ma 98.5% v out 2.5 101.5% v out v maximum output current i out(max) v in =3.5v, v out =2.463v to 2.537v 1 a load regulation v out /v out i out v out =2.5v, v in =v out +1v 1ma i out 1a 0.2 1 %/a line regulation v out /v out v in 3.5v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =1a 450 750 mv quiescent current i q v in =3.5v, i out =0ma 60 80 a standby current i std v in =3.5v, v en in off mode 0.01 1.0 a f=100hz 65 power supply rejectio n ratio psrr ripple 1vp-p v in =3.5v, i out =100ma f=1khz 65 db output voltage temperature coefficient v out /v out t i out =30ma 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v en low voltage v il enable logic low, regulator off 0.4 v start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m ? v out discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 25 c soic-8 74.6 thermal resistance jc sot-89-5 47 c/w note 2: to prevent the short circuit current protectio n feature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only.
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 9 electrical characteristics (continued) ap2115-3.3 electrical ch aracteristics (note 2) v in =4.3v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a =25c, bold typeface applies over -40 o c t j 85 o c ranges, unless otherwise specified (note 3). parameter symbol test conditions min typ max unit output voltage v out v in =4.3v, 1ma i out 30ma 98.5% v out 3.3 101.5% v out v maximum output current i out(max) v in =4.3v, v out =3.25v to 3.35v 1 a load regulation v out /v out i out v in =4.3v, 1ma i out 1a 0.2 1 %/a line regulation v out /v out v in 4.3v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =1a 450 750 mv quiescent current i q v in =4.3v, i out =0ma 65 90 a f=100hz 65 power supply rejectio n ratio psrr ripple 1vp-p v in =4.3v, i out =100ma f=1khz 65 db output voltage temperature coefficient v out /v out t i out =30ma 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v en low voltage v il enable logic low, regulator off 0.4 v standby current i std v in =3.5v, v en in off mode 0.01 1.0 a start-up time t s n o load 20 s en pull down resistor r pd 3.0 m ? v out discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 25 c soic-8 74.6 thermal resistance jc sot-89-5 47 c/w note 2: to prevent the short circuit current protectio n feature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only.
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 10 typical performance characteristics figure 4. ground current vs. output current figure 5. ground current vs. output current figure 6. quiescent current vs. temperature figure 7. quiescent current vs. temperature -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 30 40 50 60 70 80 90 100 v in =4.3v i out =0ma ap2115_3.3v quiescent current ( a) temperature ( o c) 0.00.20.40.60.81.0 0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0 400.0 450.0 500.0 ap2115_3.3v t a =-40 o c t a =25 o c t a =85 o c v in =4.3v ground current ( a) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 300 350 400 450 500 ap2115_1.2v t a =-40 o c t a =25 o c t a =85 o c v in =2.5v ground current ( a) output current (a) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 30 40 50 60 70 80 90 100 v in =2.5v i out =0ma ap2115_1.2v quiescent current ( a) temperature ( o c)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 11 typical performance characteristics (continued) figure 8. quiescent current vs. input voltage figure 9. quiescent current vs. input voltage figure 10. output voltage vs. temperature figure 11. output voltage vs. temperature 23456 10 20 30 40 50 60 70 80 90 100 t a = -40 o c t a = 25 o c t a = 85 o c ap2115_1.2v i out =0ma quiescent current ( a) input voltage (v) 3.5 4.0 4.5 5.0 5.5 6.0 30 40 50 60 70 80 90 100 110 ap2115_3.3v i out =0ma q u i escen t c urren t ( a) input voltage (v) t a = -40 o c t a = 25 o c t a = 85 o c -40-20 0 20406080 1.180 1.184 1.188 1.192 1.196 1.200 1.204 1.208 1.212 1.216 ap2115_1.2v output voltage (v) temperature ( o c) i o =10ma i o =100ma i o =500ma i o =1000ma v in =2.5v -40-20 0 20406080 3.25 3.26 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 3.35 ap2115_3.3v v in =4.3v output voltage (v) temperature ( o c) i o =10ma i o =100ma i o =500ma i o =1000ma
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 12 typical performance characteristics (continued) figure 12. output voltage vs. input voltage figure 13. output voltage vs. input voltage figure 14. output voltage vs. output current figure 15. output voltage vs. output current 0.51.01.52.02.53.03.54.04.55.05.56.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t a =-40 o c t a =25 o c t a =85 o c ap2115_3.3v output voltage (v) input voltage (v) c in =4.7 f c out =4.7 f i out =10ma 0.0 0.2 0.4 0.6 0.8 1.0 1.150 1.155 1.160 1.165 1.170 1.175 1.180 1.185 1.190 1.195 1.200 1.205 1.210 ap2115_1.2v v in =2.5v output voltage (v) output current (a) t a =-40 o c t a =25 o c t a =85 o c 0.0 0.2 0.4 0.6 0.8 1.0 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 3.35 ap2115_3.3v t a =-40 o c t a =25 o c t a =85 o c v in =4.3v output voltage (v) output current (a) 123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t a =-40 o c t a =25 o c t a =85 o c ap2115_1.2v output voltage (v) input voltage (v) c in =4.7 f c out =4.7 f i out =10ma
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 13 typical performance characteristics (continued) figure 16. output voltage vs. output current figure 17. output voltage vs. output current figure 18. maximum output current vs. input voltage figure 19. maximum output current vs. input voltage 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ap2115_3.3v maximum output current (a) input voltage (v) c in =4.7 f c out =4.7 f t a =25 o c 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6. 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ap2115_1.2v maximum output current (a) input voltage (v) c in =4.7 f c out =4.7 f t a =25 o c 0.00.20.40.60.81.01.21.4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v in =2.5v v in =3.3v ap2115_1.2v t a =25 o c c in =4.7 f c out =4.7 f output voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v in =4.3v v in =5v ap2115_3.3v t a =25 o c c in =4.7 f c out =4.7 f output voltage (v) output current (a)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 14 typical performance characteristics (continued) figure 20. dropout voltage vs. output current figure 21. output short current vs. temperature figure 22. output short current vs. temperature figure 23. psrr vs. frequency -40-20 0 20406080 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 v in =2.5v output short current (a) temperature ( o c) ap2115_1.2v -40-20 0 20406080 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 v in =4.3v ap2115_3.3v output short current (a) temperature ( o c) 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 ap2115_1.2v t a =25 o c c in =1 f c out =4.7 f i out =10ma psrr (db) frequency (hz) ripple=1vpp 0.0 0.2 0.4 0.6 0.8 1.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 ap2115_3.3v t a =-40 o c t a =25 o c t a =85 o c dropout voltage (v) output current (a) c in =4.7 f c out =4.7 f
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 15 typical performance characteristics (continued) figure 24. psrr vs. frequency figure 25. load transient i out 500ma/div 1a 0a v outac 50mv/div 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 i out =10ma i out =100ma ap2115_3.3v t a =25 o c c in =1 f c out =4.7 f psrr (db) frequency (hz) ripple=1vp-p c in =4.7 f c out =4.7 f
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 16 typical application ap2115 gnd vin cin 4.7 f vout 1.2v/1.8v/ 2.5v/3.3v cout 4.7 f off ven on figure 26. ap2115 typical application
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 17 mechanical dimensions soic-8 unit: mm(inch) r0.150(0.006)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2115 jul. 2011 rev 1. 1 bcd semiconductor manufacturing limited 18 mechanical dimensions (continued) sot-89-5 unit: mm(inch) 45 1.030(0.041)ref 1.550(0.061)ref 4.400(0.173) 4.600(0.181) 0.900(0.035) 1.100(0.043) 3.950(0.156) 4.250(0.167) 3.000(0.118) typ 0.480(0.019) 1.100(0.043) 0.900(0.035) 2.300(0.091) 2.600(0.102) 0.320(0.013) 0.520(0.020) 3 10 2.060(0.081)ref 1.400(0.055) 1.600(0.063) 0.350(0.014) 0.450(0.018) r0.150(0.006) 3 10 1.500(0.059) 0.320(0.013)ref 1.620(0.064)ref 2.210(0.087)ref 0.320(0.013) 0.520(0.020) 1.800(0.071)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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